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    85 °C/85%‐Stable n‐i‐p Perovskite Photovoltaics with NiOx Hole Transport Layers Promoted By Perovskite Quantum Dots

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    85 °C/85%‐Stable n‐i‐p Perovskite Photovoltaics with NiOx Hole Transport Layers Promoted By Perovskite Quantum Dots

    New search for: Cheng, Fangwen
    New search for: Cao, Fang
    New search for: Chen, Binwen
    New search for: Dai, Xinfeng
    New search for: Tang, Ziheng
    New search for: Sun, Yifei
    New search for: Yin, Jun
    New search for: Li, Jing
    New search for: Zheng, Nanfeng
    New search for: Wu, Binghui

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    85 °C/85%‐Stable n‐i‐p Perovskite Photovoltaics with NiOx Hole Transport Layers Promoted By Perovskite Quantum Dots

    New search for: Cheng, Fangwen
    New search for: Cao, Fang
    New search for: Chen, Binwen
    New search for: Dai, Xinfeng
    New search for: Tang, Ziheng
    New search for: Sun, Yifei
    New search for: Yin, Jun
    New search for: Li, Jing
    New search for: Zheng, Nanfeng
    New search for: Wu, Binghui

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    Title:

    85 °C/85%‐Stable n‐i‐p Perovskite Photovoltaics with NiOx Hole Transport Layers Promoted By Perovskite Quantum Dots

    Contributors:

    Cheng, Fangwen (author) / Cao, Fang (author) / Chen, Binwen (author) / Dai, Xinfeng (author) / Tang, Ziheng (author) / Sun, Yifei (author) / Yin, Jun (author) / Li, Jing (author) / Zheng, Nanfeng (author) / Wu, Binghui (author)

    Published in:

    Advanced Science ; 10

    Publication date:

    2023-01-01

    Size:

    1 pages

    ISSN:

    2198-3844

    DOI:

    https://doi.org/10.1002/advs.202206766

    Type of media:

    Article (Journal)

    Type of material:

    Electronic Resource

    Language:

    English

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