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Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics
Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering technique or high‐temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low‐temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride‐co‐trifluoroethylene) (PVDF‐TrFE) as the dielectric, which conquers the challenging issue of gate‐electric‐field screening effect in MHP FETs. Additionally, an ultra‐thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n‐type semi‐transparent MAPbBr3 FETs and fully transparent MAPbCl3 FETs which can operate well at room temperature with mobility over 10−3 cm2 V−1 s−1 and on/off ratio >103 are achieved for the first time. The low‐temperature solution processability of these FETs makes them particularly attractive for applications in low‐cost, large‐area transparent electronics.
Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics
Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering technique or high‐temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low‐temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride‐co‐trifluoroethylene) (PVDF‐TrFE) as the dielectric, which conquers the challenging issue of gate‐electric‐field screening effect in MHP FETs. Additionally, an ultra‐thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n‐type semi‐transparent MAPbBr3 FETs and fully transparent MAPbCl3 FETs which can operate well at room temperature with mobility over 10−3 cm2 V−1 s−1 and on/off ratio >103 are achieved for the first time. The low‐temperature solution processability of these FETs makes them particularly attractive for applications in low‐cost, large‐area transparent electronics.
Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics
Xia, Jiangnan (author) / Qiu, Xincan (author) / Liu, Yu (author) / Chen, Ping‐An (author) / Guo, Jing (author) / Wei, Huan (author) / Ding, Jiaqi (author) / Xie, Haihong (author) / Lv, Yawei (author) / Li, Fuxiang (author)
Advanced Science ; 10
2023-04-01
9 pages
Article (Journal)
Electronic Resource
English
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