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Light‐Induced Quantum Anomalous Hall Effect on the 2D Surfaces of 3D Topological Insulators
Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time‐reversal symmetry (TRS) breaking. In most cases, one can break the TRS of time‐reversal invariant topological materials to yield QAH effect, which is essentially a topological phase transition. However, conventional topological phase transition induced by external field/stimulus usually needs a route along which the bandgap closes and reopens. Hence, the transition occurs only when the magnitude of field/stimulus is larger than a critical value. In this work the authors propose that using gapless systems, the transition can happen at an arbitrarily weak (but finite) external field strength. For such an unconventional topological phase transition, the bandgap closing is guaranteed by bulk‐edge correspondence and symmetries, while the bandgap reopening is induced by external fields. This concept is demonstrated on the 2D surface states of 3D topological insulators like Bi2Se3, which become 2D QAH insulators once a circularly polarized light is turned on, according to the Floquet time crystal theory. The sign of quantized Chern number can be controlled via the chirality of the light. This provides a convenient and dynamic approach to trigger topological phase transitions and create QAH insulators.
Light‐Induced Quantum Anomalous Hall Effect on the 2D Surfaces of 3D Topological Insulators
Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time‐reversal symmetry (TRS) breaking. In most cases, one can break the TRS of time‐reversal invariant topological materials to yield QAH effect, which is essentially a topological phase transition. However, conventional topological phase transition induced by external field/stimulus usually needs a route along which the bandgap closes and reopens. Hence, the transition occurs only when the magnitude of field/stimulus is larger than a critical value. In this work the authors propose that using gapless systems, the transition can happen at an arbitrarily weak (but finite) external field strength. For such an unconventional topological phase transition, the bandgap closing is guaranteed by bulk‐edge correspondence and symmetries, while the bandgap reopening is induced by external fields. This concept is demonstrated on the 2D surface states of 3D topological insulators like Bi2Se3, which become 2D QAH insulators once a circularly polarized light is turned on, according to the Floquet time crystal theory. The sign of quantized Chern number can be controlled via the chirality of the light. This provides a convenient and dynamic approach to trigger topological phase transitions and create QAH insulators.
Light‐Induced Quantum Anomalous Hall Effect on the 2D Surfaces of 3D Topological Insulators
Xu, Haowei (author) / Zhou, Jian (author) / Li, Ju (author)
Advanced Science ; 8
2021-09-01
7 pages
Article (Journal)
Electronic Resource
English
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