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Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

Kan, P. Y. Y. / Finstad, T. G. / Electrochemical Society

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Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

Kan, P. Y. Y. / Finstad, T. G. / Electrochemical Society

Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

Kan, P. Y. Y. / Finstad, T. G. / Electrochemical Society

Zugriff

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Dokumentinformationen

Titel:

Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

Beteiligte:

Kan, P. Y. Y. ( Autor:in ) / Finstad, T. G. ( Autor:in ) / Schmuki, P. / Electrochemical Society

Kongress:

International Symposium; 3rd, Pits and pores: formation, properties, and significance for advanced luminescent materials ; 2004 ; Honolulu

Erschienen in:

Pits and pores: formation, properties, and significance for advanced luminescent materials ; 109-116

PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV

Erscheinungsdatum:

01.01.2006

Format / Umfang:

8 pages

Anmerkungen:

Held as part of the 206th meeting of The Electrochemical Society.; Includes bibliographical references and indexes

ISBN:

1566774748

Medientyp:

Aufsatz (Konferenz)

Format:

Sprache:

Englisch

Schlagwörter:

Luminescence , Porous silicon , Corrosion and anti-corrosives , Pores , Advanced materials , Porous materials , Pits

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