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    Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

    New search for: Kan, P. Y. Y.
    New search for: Finstad, T. G.
    New search for: Schmuki, P.

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    Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

    New search for: Kan, P. Y. Y.
    New search for: Finstad, T. G.
    New search for: Schmuki, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

    New search for: Kan, P. Y. Y.
    New search for: Finstad, T. G.
    New search for: Schmuki, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Bi-Stable Pore Size during Electrochemical Etching of n-Type Silicon

    Contributors:

    Kan, P. Y. Y. (author) / Finstad, T. G. (author) / Schmuki, P. / Electrochemical Society

    Conference:

    International Symposium; 3rd, Pits and pores: formation, properties, and significance for advanced luminescent materials ; 2004 ; Honolulu

    Published in:

    Pits and pores: formation, properties, and significance for advanced luminescent materials ; 109-116

    PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV

    Publication date:

    2006-01-01

    Size:

    8 pages

    Remarks:

    Held as part of the 206th meeting of The Electrochemical Society.; Includes bibliographical references and indexes

    ISBN:

    1566774748

    Type of media:

    Conference paper

    Type of material:

    Print

    Language:

    English

    Keywords:

    Pits , Pores , Advanced materials , Porous materials , Porous silicon , Corrosion and anti-corrosives , Luminescence

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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