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Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
Fujikura, H. (Autor:in) / Tomozawa, H. (Autor:in) / Akazawa, M. (Autor:in) / Hasegawa, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 60 ; 702
01.01.1992
702 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
621.35
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