Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure
Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure
Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure
Aoki, K. (Autor:in) / Taguchi, T.
01.01.1993
453 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells
British Library Online Contents | 1999
|Saturation of Luminescence Quenching due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well
British Library Online Contents | 1995
|Photoconductivity in BiFeO3/La0.7Sr0.3MnO3 heterostructure
British Library Online Contents | 2010
|Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
British Library Online Contents | 1994
|British Library Online Contents | 1997
|