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Tunable infrared photoemission sensor on Si using epitaxial ErSi~2/Si heterostructures
Tunable infrared photoemission sensor on Si using epitaxial ErSi~2/Si heterostructures
Tunable infrared photoemission sensor on Si using epitaxial ErSi~2/Si heterostructures
Sagnes, I. (Autor:in) / Campidelli, Y. (Autor:in) / Vincent, G. (Autor:in) / Badoz, P. A. (Autor:in)
01.01.1993
312 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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Si/ErSi~1~.~7 interfaces and Si reepitaxy on the ErSi~1~.~7/Si structure
British Library Online Contents | 1993
|Si/ErSi~1~.~7 interfaces and Si reepitaxy on the ErSi~1~.~7/Si structure
British Library Online Contents | 1993
|The influence of growth techniques on the structure of epitaxial ErSi~1~.~7 on Si(111)
British Library Online Contents | 1993
|British Library Online Contents | 1996
|Electrical and photoelectrical properties of ErSi~1~.~7/Si junctions
British Library Online Contents | 1993
|