In-plane photoconductivity of InAs/GaAs strained-layer structures prepared on variously oriented GaAs substrates

Shima, T. / Yamamoto, E. / Kuniyoshi, S. et al. | British Library Online Contents | 1996

Evaluation of nucleation and defects in MBE-grown strained InAs/GaAs quantum structures on variously oriented substrates

Suzuki, A. / Lee, J. / Kudo, K. et al. | British Library Online Contents | 1992

Annealing effect in InAs/GaAs multiple quantum wells grown on variously oriented substrates

Lee, J. / Kudo, K. / Makita, Y. et al. | British Library Online Contents | 1993

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Shi, G. X. / Xu, B. / Jin, P. et al. | British Library Online Contents | 2005

Photoluminescence characterization of InAs/GaAs quantum dot bilayers

Le Ru, E. C. / Marchioni, U. / Bennett, A. et al. | British Library Online Contents | 2002