Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
Determination of the conduction band discontinuity of a semiconductor n-N heterojunction
Kok, W. C. (Autor:in)
APPLIED SURFACE SCIENCE ; 75 ; 303
01.01.1994
303 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
| British Library Online Contents | 1996
| British Library Online Contents | 2011
Control of band discontinuity at III-V semiconductor interface by Si intralayers
| British Library Online Contents | 2004
Element-Embedded Localization Band Based on Regularized Displacement Discontinuity
| Online Contents | 1996
Determination of Discontinuity Size Distributions from Scanline Data
| Online Contents | 2004