Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Defects in Electron Irradiated GaP and GaInP
Defects in Electron Irradiated GaP and GaInP
Defects in Electron Irradiated GaP and GaInP
Zaidi, M. A. (Autor:in) / Maaref, H. (Autor:in) / Zazoui, M. (Autor:in) / Bourgoin, J. C. (Autor:in)
MATERIALS SCIENCE FORUM ; 295
01.01.1994
295 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Control of defects in GaAs/GaInP interface grown by MOVPE
British Library Online Contents | 1995
|Vacancy-related defects in ion implanted and electron irradiated silicon
British Library Online Contents | 2000
|Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
British Library Online Contents | 2011
|Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
British Library Online Contents | 2011
|Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds
British Library Online Contents | 1997
|