Growth and characterization of III-V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials: Fid-Bau Portal

Growth and characterization of III-V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials

Tatsuno, M. / Hosokawa, Y. / Iwasaki, T. / Toyoda, N.

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Growth and characterization of III-V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials

Tatsuno, M. / Hosokawa, Y. / Iwasaki, T. / Toyoda, N.

Growth and characterization of III-V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials

Tatsuno, M. / Hosokawa, Y. / Iwasaki, T. / Toyoda, N.

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Titel:

Growth and characterization of III-V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials

Beteiligte:

Tatsuno, M. (Autor:in) / Hosokawa, Y. (Autor:in) / Iwasaki, T. (Autor:in) / Toyoda, N. (Autor:in) / Fornari, R.

Erschienen in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 65

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Erscheinungsdatum:

01.01.1994

Format / Umfang:

65 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.11

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Thermal stresses and dislocation formation in liquid-encapsulated Czochralski-grown InP crystals

Fogliani, S. / Masi, M. / Carra, S. et al. | British Library Online Contents | 1994

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Favaretto, M. / Guadalupi, G. M. / Meregalli, L. et al. | British Library Online Contents | 1994

Investigations of structural defects by etching of GaSb grown by the liquid-encapsulated Czochralski technique

Costa, E. M. / Dedavid, B. A. / Mueller, A. | British Library Online Contents | 1997

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