Investigation of the cationic ordering in InGaP/GaAs epilayers grown by low-pressure, metal organic vapour phase epitaxy

Francesio, L. / Franzosi, P. / Caldironi, M. et al. | British Library Online Contents | 1994

Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

Attolini, G. / Scardova, S. / Germini, F. et al. | British Library Online Contents | 2002

Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires

Kicin, S. / Novak, J. / Hasenohrl, S. et al. | British Library Online Contents | 2001

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993

Lattice curvature induced substrate X-ray line broadening in InGaP/GaAs heterostructures

Lee, J. W. / Oh, M. S. / Kim, J. Y. et al. | British Library Online Contents | 1994