Characterization of high quality InGaP/GaAs and InGaAsP/GaAs heterostructures grown by low pressure metal-organic chemical vapour deposition: Fid-Bau Portal

Characterization of high quality InGaP/GaAs and InGaAsP/GaAs heterostructures grown by low pressure metal-organic chemical vapour deposition

Caldironi, M. / Vitali, L. / Dellagiovanna, M. / Di Paola, A.

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Characterization of high quality InGaP/GaAs and InGaAsP/GaAs heterostructures grown by low pressure metal-organic chemical vapour deposition

Caldironi, M. / Vitali, L. / Dellagiovanna, M. / Di Paola, A.

Characterization of high quality InGaP/GaAs and InGaAsP/GaAs heterostructures grown by low pressure metal-organic chemical vapour deposition

Caldironi, M. / Vitali, L. / Dellagiovanna, M. / Di Paola, A.

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Check availability in my library

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Document information

Title:

Characterization of high quality InGaP/GaAs and InGaAsP/GaAs heterostructures grown by low pressure metal-organic chemical vapour deposition

Contributors:

Caldironi, M. (author) / Vitali, L. (author) / Dellagiovanna, M. (author) / Di Paola, A. (author) / Fornari, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 158

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

158 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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