Roughening and facetting in lattice-mismatched heteroepitaxial growth of compound semiconductors: a Monte Carlo study: Fid-Bau Portal

Roughening and facetting in lattice-mismatched heteroepitaxial growth of compound semiconductors: a Monte Carlo study

Djafari Rouhani, M. / Sahlaoui, M. / Gue, A. M. / Esteve, D.

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Roughening and facetting in lattice-mismatched heteroepitaxial growth of compound semiconductors: a Monte Carlo study

Djafari Rouhani, M. / Sahlaoui, M. / Gue, A. M. / Esteve, D.

Roughening and facetting in lattice-mismatched heteroepitaxial growth of compound semiconductors: a Monte Carlo study

Djafari Rouhani, M. / Sahlaoui, M. / Gue, A. M. / Esteve, D.

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Titel:

Roughening and facetting in lattice-mismatched heteroepitaxial growth of compound semiconductors: a Monte Carlo study

Beteiligte:

Djafari Rouhani, M. (Autor:in) / Sahlaoui, M. (Autor:in) / Gue, A. M. (Autor:in) / Esteve, D. (Autor:in) / Fornari, R.

Erschienen in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 200

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Erscheinungsdatum:

01.01.1994

Format / Umfang:

200 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.11

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