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Gate currents in heterostructure field-effect transistors: contribution by "warm" electrons
Gate currents in heterostructure field-effect transistors: contribution by "warm" electrons
Gate currents in heterostructure field-effect transistors: contribution by "warm" electrons
Schuermeyer, F. (Autor:in) / Shur, M. (Autor:in) / Martinez, E. (Autor:in) / Cerny, C. (Autor:in) / Fornani, R.
01.01.1994
264 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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