Optical properties of GaSb-AlSb heterostructures grown by molecular beam epitaxy

Lambert, B. / Toudic, Y. / Rouillard, Y. et al. | British Library Online Contents | 1993

Parametric strudy on InAs quantum dots grown by migration enhanced molecular beam epitaxy

Jindong Song, / Wonjun Choi, / Jungil Lee, | IEEE | 2006

Intersubband transitions in InAs/AlSb quantum wells

Simon, A. / Scriba, J. / Gauer, C. et al. | British Library Online Contents | 1993

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Kim, J. H. / Park, Y. J. / Park, Y. M. et al. | British Library Online Contents | 2007

Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates

Ohtani, K. / Sato, A. / Ohno, Y. et al. | British Library Online Contents | 2000