Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Temperature dependence of the thin film silicon-on-insulator field effect transistor current characteristics based on full solution for the one-dimensional MISIS structure
Temperature dependence of the thin film silicon-on-insulator field effect transistor current characteristics based on full solution for the one-dimensional MISIS structure
Temperature dependence of the thin film silicon-on-insulator field effect transistor current characteristics based on full solution for the one-dimensional MISIS structure
Scheinert, S. (Autor:in) / Paasch, G. (Autor:in) / Fricke, K. / Krozer, V.
01.01.1995
38 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
AC analysis of MISIS capacitor
IEEE | 2006
|Thin film diamond metal-insulator field effect transistor for high temperature applications
British Library Online Contents | 1997
|British Library Online Contents | 2002
|MIS field effect transistor with barium titanate thin film as a gate insulator
British Library Online Contents | 2009
|British Library Online Contents | 2015
|