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Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions
Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions
Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions
Fedotov, S. A. (Autor:in) / Varichenko, V. S. (Autor:in) / Zaitsev, A. M. (Autor:in) / Ishimaru, M. (Autor:in) / Fricke, K. / Krozer, V.
01.01.1995
202 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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