Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH~3
Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH~3
Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH~3
Hong, C. H. (Autor:in) / Pavlidis, D. (Autor:in) / Hong, K. (Autor:in) / Wang, K. (Autor:in)
01.01.1995
69 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2012
|Metal-organic chemical vapor deposition growth of GaN
British Library Online Contents | 1995
|Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition
British Library Online Contents | 1993
|British Library Online Contents | 1997
|Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
British Library Online Contents | 1998
|