Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Side-gated GaAs/AlGaAs double barrier resonant tunnelling diodes formed by patterened substrate regrowth
Side-gated GaAs/AlGaAs double barrier resonant tunnelling diodes formed by patterened substrate regrowth
Side-gated GaAs/AlGaAs double barrier resonant tunnelling diodes formed by patterened substrate regrowth
Quierin, M. A. (Autor:in) / Burroughes, J. H. (Autor:in) / Grimshaw, M. P. (Autor:in) / Leadbeater, M. L. (Autor:in) / Ritchie, D. A. (Autor:in) / Pepper, M. (Autor:in) / Henini, M. / Szweda, R.
01.01.1995
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1993
|MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates
British Library Online Contents | 1993
|n-type Si/SiGe resonant tunnelling diodes
British Library Online Contents | 2002
|A hole facet wire formed by MBE regrowth over an ex-situ patterned GaAs substrate
British Library Online Contents | 1995
|GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron - LO Phonon Transitions
British Library Online Contents | 2005
|