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Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon
Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon
Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon
Amekura, H. (Autor:in) / Kishimoto, N. (Autor:in) / Kono, K. (Autor:in) / Saito, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 1159-1164
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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