Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon: Fid-Bau Portal

Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon

Amekura, H. / Kishimoto, N. / Kono, K. / Saito, T.

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Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon

Amekura, H. / Kishimoto, N. / Kono, K. / Saito, T.

Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon

Amekura, H. / Kishimoto, N. / Kono, K. / Saito, T.

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Check availability in my library

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Document information

Title:

Irradiation Temperature Dependence of Residual Defects in 17Mev-Proton Bombarded Silicon

Contributors:

Amekura, H. (author) / Kishimoto, N. (author) / Kono, K. (author) / Saito, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1159-1164

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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