Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy: Fid-Bau Portal

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Muto, S. / Takeda, S. / Hirata, M.

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Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Muto, S. / Takeda, S. / Hirata, M.

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Muto, S. / Takeda, S. / Hirata, M.

Zugriff

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Dokumentinformationen

Titel:

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Beteiligte:

Muto, S. (Autor:in) / Takeda, S. (Autor:in) / Hirata, M. (Autor:in)

Erschienen in:

MATERIALS SCIENCE FORUM ; 1171-1176

Erscheinungsdatum:

01.01.1995

Format / Umfang:

6 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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