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First Principles Investigation of Vacancy Oxygen Defects in Si
First Principles Investigation of Vacancy Oxygen Defects in Si
First Principles Investigation of Vacancy Oxygen Defects in Si
Ewels, C. P. (Autor:in) / Jones, R. (Autor:in) / Oeberg, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 1297-1302
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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