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First Principles Investigation of Vacancy Oxygen Defects in Si

Ewels, C. P. / Jones, R. / Oeberg, S.

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First Principles Investigation of Vacancy Oxygen Defects in Si

Ewels, C. P. / Jones, R. / Oeberg, S.

First Principles Investigation of Vacancy Oxygen Defects in Si

Ewels, C. P. / Jones, R. / Oeberg, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

First Principles Investigation of Vacancy Oxygen Defects in Si

Contributors:

Ewels, C. P. (author) / Jones, R. (author) / Oeberg, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1297-1302

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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