Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As
Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As
Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As
Itoh, K. M. (Autor:in) / Walukiewicz, W. (Autor:in) / Beeman, J. W. (Autor:in) / Haller, E. E. (Autor:in) / Kim, H. (Autor:in) / Mayur, A. J. (Autor:in) / Sciacca, M. D. (Autor:in) / Ramdas, A. K. (Autor:in) / Buczko, R. (Autor:in) / Farmer, J. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 127-132
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As
British Library Online Contents | 1997
|Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys
British Library Online Contents | 1993
|Electric field effects on excitons in gallium nitride
British Library Online Contents | 1997
|Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
British Library Online Contents | 1998
|British Library Online Contents | 2010
|