Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
Manor, R. (Autor:in) / Brafman, O. (Autor:in) / Bean, J. C. (Autor:in)
APPLIED SURFACE SCIENCE ; 102 ; 217-220
01.01.1996
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Quantum confinement in oxide quantum wells
British Library Online Contents | 2013
|Push Pull Substituted Polythiophenes: Towards Charge Confinement in Molecular Quantum Wells
British Library Online Contents | 1995
|Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces
Wiley | 2018
|Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells
British Library Online Contents | 2000
|Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
British Library Online Contents | 1994
|