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On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells
Manor, R. (author) / Brafman, O. (author) / Bean, J. C. (author)
APPLIED SURFACE SCIENCE ; 102 ; 217-220
1996-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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