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Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
Krawczyk, S. K. (Autor:in) / Gendry, M. (Autor:in) / Klingelhoefer, C. (Autor:in) / Venet, T. (Autor:in) / Buchheit, M. (Autor:in) / Blanchet, R. (Autor:in) / Hollinger, G. (Autor:in) / Balkanski, M. / Kamimura, H. / Mahajan, S.
01.01.1996
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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