Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere
Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere
Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere
Sadler, L. Y. (Autor:in) / Shamsuzzoha, M. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 12 ; 147-160
01.01.1997
14 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Partial crystallization of silicon by high intensity laser irradiation
British Library Online Contents | 2009
|Morphological and electrical modifications in silicon submitted to high-intensity laser irradiation
British Library Online Contents | 1993
|High-temperature behavior of Cf/SiOC composites in inert atmosphere
British Library Online Contents | 2011
|Crystallization of silicon carbide thin films by pulsed laser irradiation
British Library Online Contents | 1996
|High temperature test rig for inert atmosphere miniature specimen creep testing
British Library Online Contents | 2011
|