Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2
Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2
Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2
Zvanut, M. E. (Autor:in) / Chen, T. L. (Autor:in)
MATERIALS SCIENCE FORUM ; 7-10
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
British Library Online Contents | 1994
|Ab initio calculations of the oxygen-vacancy dipoles and M centers in CaF2
British Library Online Contents | 2007
|British Library Online Contents | 2018
|Excess vacancy generation in silicon during surface silicide formation
British Library Online Contents | 1993
|Improvement of Thermoelectric Properties of CuAlO~2 by Excess Oxygen Doping in Annealing
British Library Online Contents | 2013
|