Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2: Fid-Bau Portal

Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2

Zvanut, M. E. / Chen, T. L.

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Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2

Zvanut, M. E. / Chen, T. L.

Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2

Zvanut, M. E. / Chen, T. L.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO~2

Contributors:

Zvanut, M. E. (author) / Chen, T. L. (author)

Published in:

MATERIALS SCIENCE FORUM ; 7-10

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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