Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Atomic layer epitaxy of GaAs using GaBr and GaI sources
Atomic layer epitaxy of GaAs using GaBr and GaI sources
Atomic layer epitaxy of GaAs using GaBr and GaI sources
Taki, T. (Autor:in) / Koukitu, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 112 ; 127-131
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium
British Library Online Contents | 1994
|Effects of active hydrogen on atomic layer epitaxy of GaAs
British Library Online Contents | 1997
|Molecular layer epitaxy of GaAs
British Library Online Contents | 1994
|Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs
British Library Online Contents | 1994
|Surface stoichiometry and the role of adsorbates during GaAs atomic layer epitaxy
British Library Online Contents | 1994
|