Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates
Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates
Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates
Frigeri, C. (Autor:in) / Brinciotti, A. (Autor:in) / Di Paola, A. (Autor:in) / Ritchie, D. M. (Autor:in) / Longo, F. (Autor:in) / Vidimari, F. (Autor:in) / Jantz, W. / Baeumler, M.
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
British Library Online Contents | 1994
|British Library Online Contents | 2006
|Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
British Library Online Contents | 2014
|Control of Zn composition (0x1-xZnxTe epitaxial layers on GaAs substrates grown by MOVPE
British Library Online Contents | 2005
|InGaAs layers of high quality grown on patterned GaAs substrates with trenches
British Library Online Contents | 1999
|