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Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Morvan, E. (Autor:in) / Godignon, P. (Autor:in) / Montserrat, J. (Autor:in) / Fernandez, J. (Autor:in) / Flores, D. (Autor:in) / Millan, J. (Autor:in) / Chante, J. P. (Autor:in) / Camassel, J. / Fricke, K. / Krozer, V.
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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