A platform for research: civil engineering, architecture and urbanism
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
Morvan, E. (author) / Godignon, P. (author) / Montserrat, J. (author) / Fernandez, J. (author) / Flores, D. (author) / Millan, J. (author) / Chante, J. P. (author) / Camassel, J. / Fricke, K. / Krozer, V.
1997-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Online Contents | 1994
|British Library Online Contents | 1997
|Castelli - Castelli in Montecarlo
Online Contents | 1999
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
British Library Online Contents | 2003
|