Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
AlN epitaxial growth on atomically flat initially nitrided -Al~2O~3 wafer
AlN epitaxial growth on atomically flat initially nitrided -Al~2O~3 wafer
AlN epitaxial growth on atomically flat initially nitrided -Al~2O~3 wafer
Suetsugu, T. (Autor:in) / Yamazaki, T. (Autor:in) / Tomabechi, S. (Autor:in) / Wada, K. (Autor:in) / Masu, K. (Autor:in) / Tsubouchi, K. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 540-545
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films
British Library Online Contents | 2010
|Li-doped NiO epitaxial thin film with atomically flat surface
British Library Online Contents | 2004
|Ar plasma irradiation effects in atomically controlled Si epitaxial growth
British Library Online Contents | 2004
|An Initially Deformed Flat Frame Finite Element
Online Contents | 2013
|