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MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
Keller, S. (Autor:in) / Abare, A. C. (Autor:in) / Minsky, M. S. (Autor:in) / Wu, X. H. (Autor:in) / Mack, M. P. (Autor:in) / Speck, J. S. (Autor:in) / Hu, E. (Autor:in) / Coldren, L. A. (Autor:in) / Mishra, U. K. (Autor:in) / DenBaars, S. P. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1157-1160
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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