Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer

Godlewski, M. / Goldys, E. M. / Phillips, M. R. et al. | British Library Online Contents | 2001

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

Keller, S. / Abare, A. C. / Minsky, M. S. et al. | British Library Online Contents | 1998

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Goldys, E. M. / Butcher, K. S. / Tansley, T. L. | British Library Online Contents | 2004

Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate

Yuan, X. L. / Zhang, B. P. / Niitsuma, J. et al. | British Library Online Contents | 2006

Optical properties of high density InGaN QDs grown by MOCVD

Lee, C. K. / Hsu, J. H. / Wang, D. C. et al. | British Library Online Contents | 2006