Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Schoettker, B. (Autor:in) / Kuehler, J. (Autor:in) / As, D. J. (Autor:in) / Schikora, D. (Autor:in) / Lischka, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1173-1176
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Cubic (Mg,Zn)O nanowire growth using catalyst-driven molecular beam epitaxy
British Library Online Contents | 2005
|Nucleation during molecular beam epitaxy
British Library Online Contents | 1994
|Properties of cubic (In,Ga)N grown by molecular beam epitaxy
British Library Online Contents | 1999
|Mechanisms of layer growth during molecular beam epitaxy of semiconductor films
British Library Online Contents | 1995
|Growth Kinetics of Silicon Molecular Beam Epitaxy
Springer Verlag | 1988
|