An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN: Fid-Bau Portal

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schoettker, B. / Kuehler, J. / As, D. J. / Schikora, D. / Lischka, K.

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An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schoettker, B. / Kuehler, J. / As, D. J. / Schikora, D. / Lischka, K.

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Schoettker, B. / Kuehler, J. / As, D. J. / Schikora, D. / Lischka, K.

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Check availability in my library

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Document information

Title:

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Contributors:

Schoettker, B. (author) / Kuehler, J. (author) / As, D. J. (author) / Schikora, D. (author) / Lischka, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1173-1176

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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