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Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Wasik, D. (Autor:in) / Dmowski, L. (Autor:in) / Mikucki, J. (Autor:in) / Lusakowski, J. (Autor:in) / Hsu, L. (Autor:in) / Walukiewicz, W. (Autor:in) / Bi, W. G. (Autor:in) / Tu, C. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 813-818
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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