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Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Wasik, D. (author) / Dmowski, L. (author) / Mikucki, J. (author) / Lusakowski, J. (author) / Hsu, L. (author) / Walukiewicz, W. (author) / Bi, W. G. (author) / Tu, C. W. (author)
MATERIALS SCIENCE FORUM ; 258/263 ; 813-818
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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