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As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
Krambrock, K. (Autor:in) / Pinheiro, M. V. B. (Autor:in) / Medeiros, S. M. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 957-962
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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