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    As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

    New search for: Krambrock, K.
    New search for: Pinheiro, M. V. B.
    New search for: Medeiros, S. M.

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    As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

    New search for: Krambrock, K.
    New search for: Pinheiro, M. V. B.
    New search for: Medeiros, S. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

    New search for: Krambrock, K.
    New search for: Pinheiro, M. V. B.
    New search for: Medeiros, S. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

    Contributors:

    Krambrock, K. (author) / Pinheiro, M. V. B. (author) / Medeiros, S. M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 258/263 ; 957-962

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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