Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
Kinoshita, T. (Autor:in) / Itoh, K. M. (Autor:in) / Muto, J. (Autor:in) / Schadt, M. (Autor:in) / Pensl, G. (Autor:in) / Takeda, K. (Autor:in) / Pensl, G. / Morkoc, H. / Monemar, B. / Jansen, E.
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H- and 6H-SiC
| British Library Online Contents | 2000
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
| British Library Online Contents | 2004
Hall coefficient and Hall mobility in the variable range hopping conduction regime in n-type CuInSe2
| British Library Online Contents | 2006
Hall mobility profiling in high electron mobility transistor structures
| British Library Online Contents | 1993
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
| British Library Online Contents | 2004