Anisotropic Properties of GaN Studied by Raman Scattering

Lin, H. C. / Feng, Z. C. / Chen, M. S. et al. | British Library Online Contents | 2006

A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiC

Velmre, E. / Udal, A. | British Library Online Contents | 2000

6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Paskova, T. / Valcheva, E. / Ivanov, I. G. et al. | British Library Online Contents | 1998

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Xu, Q. / Sun, H.Y. / Chen, C. et al. | British Library Online Contents | 2012

Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

Harima, H. / Hosoda, T. / Nakashima, S. | British Library Online Contents | 1998