Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
Izumi, T. (Autor:in) / Kobayashi, K. (Autor:in) / Hirosawa, E. (Autor:in) / Kawahara, T. (Autor:in) / Nagasawa, H. (Autor:in) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of thermal stability of ZnO:B films grown by LPCVD technique
British Library Online Contents | 2012
|Bimodal distribution of Ge islands on Si(001) grown by LPCVD
British Library Online Contents | 2000
|LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
British Library Online Contents | 2000
|Nitrogen ion bombardment of multilayer graphene films grown on Cu foil by LPCVD
British Library Online Contents | 2016
|SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis
British Library Conference Proceedings | 2010
|