Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Hasegawa, H. (Autor:in) / Sato, T. (Autor:in) / Okada, H. (Autor:in) / Jinushi, K.-I. (Autor:in) / Kasai, S. (Autor:in) / Satoh, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 123/124 ; 335-338
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures
| British Library Online Contents | 2002